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InSe
InSe
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Crystal size：6~8mm
Electrical properties：Semiconductor
Crystal structure：Hexagonal
Unit cell parameters：a = b = 0.400 nm, c = 2.497 nm, α = β = 90°, γ = 120°
Type：Synthetic
Purity：>99.9995 %
1.Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
https://science.sciencemag.org/content/369/6503/542
2.Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
https://doi.org/10.1038/s41565-018-0348-z
3.Experimental Identification of Critical Condition for Drastically Enhancing
Thermoelectric Power Factor of Two-Dimensional Layered Materials
https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03026
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